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- Browsing UP Experts (Danie Auret Collection) by Issue Date
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Browsing UP Experts (Danie Auret Collection) by Issue Date
Now showing items 1-20 of 24
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(American Institute of Physics, 2002-02-25)Gold Schottky-barrier diodes ~SBDs! were fabricated on vapor-phase-grown single-crystal ZnO. Deep-level transient spectroscopy, using these SBDs, revealed the presence of four electron traps, the major two having levels ...
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(Elsevier, 2006)We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient ...
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(Elsevier, 2006-04)We report results from an experiment designed to characterize, by high-resolution (Laplace) DLTS, the electronic properties of electron radiation induced E-centers in Si associated with P, Sb and As. Four sets of samples ...
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(Elsevier, 2007-04)Please open article to read abstract
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(Elsevier, 2007-12)Please refer to abstract in article
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(Elsevier, 2007-12-15)When using Schottky barrier diodes (SBDs) on silicon (Si) to study the thermal stability of radiation-induced defects, point defects injection into the silicon substrate can occur at temperatures where silicidation occurs. ...
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(Elsevier, 2009)Please read abstract in article
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(Elsevier, 2009)Inductively coupled plasma (ICP) etching has been used primarily on compound semiconductors. There are however compelling reasons to study the effects of ICP etching on Ge. Pd Schottky barrier diodes (SBDs) were resistively ...
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Electrical characterization of defects introduced during metallization processes in n-type germanium (Elsevier, 2009)We have studied the defects introduced in n-type Ge during electron beam deposition (EBD) and sputter deposition (SD) by deep-level transient spectroscopy (DLTS) and evaluated their infleunce on the rectification quality ...
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(Elsevier, 2009)Commercial O-face (0 0 0 1) ZnO single crystals were implanted with 200 keV Ar ions. The ion fluences applied cover a wide range from 5 x 1011 to 7 x 1016 cm-2. The implantation and the subsequent damage analysis by ...
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(Elsevier, 2009)Please read abstract in article
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(Elsevier, 2009)Please read abstract in article.
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(Elsevier, 2009)Read abstract in article.
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(Elsevier, 2009)Thin gold films were fabricated by vacuum resistive deposition on the n-Ge (111) wafers. The films were annealed between 300 and 600°C. These resulting thin films were then characterised using scanning electron microscopy ...
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(Elsevier, 2009)Read abstract in article.
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(Elsevier, 2009)Read abstract in article.
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(Elsevier, 2009)Read abstract in article.
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(American Institute of Physics, 2010-03)Hydrothermally grown n-type ZnO samples have been investigated by deep level transient spectroscopy (DLTS), thermal admittance spectroscopy (TAS), temperature dependent Hall effect (TDH) temperature, and secondary ion ...
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(Elsevier, 2010-07)Current-voltage characteristics of Au/Ni/n-GaN Schottky contacts have been measured in the 60-320 K temperature range. The zero bias barrier height, bo and ideality factor, n have been studied as a function of temperature. ...
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(American Institute of Physics (AIP), 2010-10)We have developed a compact streak camera suitable for measuring the duration of highly charged subrelativistic femtosecond electron bunches with an energy bandwidth in the order of 0.1%, as frequently used in ultrafast ...
Now showing items 1-20 of 24