Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band

Auret, Francois Danie; Meyer, Walter Ernst; Janse van Rensburg, Pieter Johan; Hayes, M.; Nel, Jacqueline Margot; Von Wenckstern, Holger; Schmidt, H.; Biehne, G.; Hochmuth, H.; Lorenz, M.; Grundmann, Marius

UPSpace Home
→
Natural and Agricultural Sciences
→
Physics
→
Research Articles (Physics)
→
View Item

Please note that UPSpace will be unavailable from Friday, 2 May at 18:00 (South African Time) until Sunday, 4 May at 20:00 due to scheduled system upgrades. We apologise for any inconvenience this may cause and appreciate your understanding.

Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band

Auret, Francois Danie; Meyer, Walter Ernst; Janse van Rensburg, Pieter Johan; Hayes, M.; Nel, Jacqueline Margot; Von Wenckstern, Holger; Schmidt, H.; Biehne, G.; Hochmuth, H.; Lorenz, M.; Grundmann, Marius

URI: http://hdl.handle.net/2263/5815

Date: 2007-12