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Browsing Physics by Issue Date
Now showing items 1-20 of 952
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(University of Pretoria, 1994)The beginning of the space-age in the 1950s led to interest in the effects of radiation on semiconductors. The systematic investigation of defect centres in semiconductors began in earnest over 30 years ago. In addition ...
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(University of Pretoria, 1995)The importance of ion implantation in physics and technology has steadily increased over the years. It is a reliable technique to introduce species into a target, altering the chemical, metallurgical, optical and electronic ...
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(American Institute of Physics, 2002-02-25)Gold Schottky-barrier diodes ~SBDs! were fabricated on vapor-phase-grown single-crystal ZnO. Deep-level transient spectroscopy, using these SBDs, revealed the presence of four electron traps, the major two having levels ...
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(American Institute of Physics, 2005-01)In this paper we investigate the relatively rare phenomenon of iridescence on the outer surface of seashells (not the well known pearly inner surfaces). Using reflection spectroscopy and scanning electron microscopy we ...
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(Elsevier, 2006)We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient ...
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(American Institute of Physics, 2006)The problem of additional time reversal (TR) degeneracy and the transformation properties of ''time reversed' wave functions are investigated. In crystals the one electron Hamiltonian is invariant with respect to a space ...
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(University of Pretoria, 2006-02-23)Cadmium sulphide (CdS) films were electrodeposited from an aqueous electrolytic solution onto indium tin oxide and fluorine doped tin oxide substrates, commonly used in photovoltaic applications. The CdS films were deposited ...
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(Elsevier, 2006-04)We report results from an experiment designed to characterize, by high-resolution (Laplace) DLTS, the electronic properties of electron radiation induced E-centers in Si associated with P, Sb and As. Four sets of samples ...
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(University of Pretoria, 2006-04-07)The accurate knowledge of the implantation profiles is of considerable interest for testing theoretical models on the stopping of ions in matter, as well as for many important applications in metallurgy and semiconductor ...
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(University of Pretoria, 2006-05-05)In this work tunability, implantation damage and recovery of GaAs doping superlattices implanted with hydrogen ions were studied. The applicability of two models of the optical properties of semiconductors was also ...
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(University of Pretoria, 2006-05-05)The presence of the hydrogen complex in Mg-doped GaN poses serious threats for the technological development of blue and ultraviolet light- emitting diodes and lasers. Since hydrogen is a difficult element to work with and ...
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(University of Pretoria, 2006-05-20)Please read the abstract in the section front of this document.
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(American Institute of Physics, 2006-06)Basic aspects of quantum entanglement are illustrated in connection with the two-component wavefunction description of spin-1/2 particles. In particular, the time evolution of entanglement in the Stern–Gerlach experiment ...
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(American Institute of Physics, 2006-09)The connection between entanglement and the speed of quantum evolution (as measured by the time needed to reach an orthogonal state) is discussed in the case of two quantum particles moving in a one-dimensional double well. ...
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(American Institute of Physics, 2006-11-10)In an iterative algorithm recently proposed by Waxman for solving eigenvalue problems, we point out that the convergence rate may be improved. For many non-singular symmetric potentials which vanish asymptotically, a simple ...
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(University of Pretoria, 2006-11-30)The study of semiconductor materials and more recently, artificially struc¬tured materials, is important for both scientific and industrial purposes. Many techniques have been developed to characterize the electronic ...
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(University of Pretoria, 2006-11-30)Please read the abstract in the section front of this document
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(University of Pretoria, 2006-11-30)Despite the poor understanding of charge transfer in conducting polymers, conducting-polymer-based devices have achieved considerable commercial success. This success is based largely on the reproducibility of the measurable ...
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(University of Pretoria, 2006-11-30)The electrically active defects introduced in GaAs by electron beam deposition (EB) of Ta were characterised. The effect of electron beam deposition on the electrical properties of GaAs was evaluated by current-voltage ...
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(University of Pretoria, 2006-12-04)Please read the abstract in the section 00front of this document
Now showing items 1-20 of 952