Effect of exposing Se pre-implanted polycrystalline SiC to maximum electronic energy loss of 33.7 keV/nm and annealing

Thumbnail Image

Files

Mabelane_Effect_2025.pdf (11.1 MB)

Date

2025-05

Authors

Mabelane, T.S.
Abdalla, Zaki Adam Yousif
Skuratov, V.A.
Ntshangase, S.S.
Masikane, S.C.
Hlatshwayo, Thulani Thokozani

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

Please read abstract in the article.

Description

DATA AVAILABILITY : Data will be made available on request.

Keywords

Swift heavy ion (SHI), Silicon carbide (SiC), Selenium, Annealing, Recrystallization, SDG-07: Affordable and clean energy

Sustainable Development Goals

SDG-07:Affordable and clean energy

Citation

Mabelane, T.S., Abdalla, Z.A.Y., Skuratov, V.A. et al. 2025, 'Effect of exposing Se pre-implanted polycrystalline SiC to maximum electronic energy loss of 33.7 keV/nm and annealing', Surfaces and Interfaces, vol. 64, art. 106376, pp. 1-11, doi : 10.1016/j.surfin.2025.106376.

URI

http://hdl.handle.net/2263/102175

Collections

Research Articles (Physics)
Research Articles (University of Pretoria)
Full item page