Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band
| dc.contributor.author | Auret, Francois Danie | |
| dc.contributor.author | Meyer, Walter Ernst | |
| dc.contributor.author | Janse van Rensburg, Pieter Johan | |
| dc.contributor.author | Hayes, M. | |
| dc.contributor.author | Nel, Jacqueline Margot | |
| dc.contributor.author | Von Wenckstern, Holger | |
| dc.contributor.author | Schmidt, H. | |
| dc.contributor.author | Biehne, G. | |
| dc.contributor.author | Hochmuth, H. | |
| dc.contributor.author | Lorenz, M. | |
| dc.contributor.author | Grundmann, Marius | |
| dc.date.accessioned | 2008-06-05T11:27:34Z | |
| dc.date.available | 2008-06-05T11:27:34Z | |
| dc.date.issued | 2007-12 | |
| dc.description.abstract | Please refer to abstract in article | en |
| dc.format.extent | 265167 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.citation | Auret, FD, Meyer, WE, Janse van Rensburg, PJ, Hayes, M, Nel, JM, Von Wenckstern, H, Schmidt, H, Biehne, G, Hochmuth, H, Lorenz, M & Grundmann, M 2007, 'Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band', Physica B : Condensed Matter, vol. 401-402, pp. 378-381. | en |
| dc.identifier.isbn | 10.1016/j.physb.2007.08.192 | |
| dc.identifier.issn | 0921-4526 | |
| dc.identifier.uri | http://hdl.handle.net/2263/5815 | |
| dc.language.iso | en | en |
| dc.publisher | Elsevier | en |
| dc.rights | Elsevier | en |
| dc.subject | ZnO | en |
| dc.subject | High resolution Laplace DLTS | en |
| dc.subject | Defects | en |
| dc.subject.lcsh | Semiconductors | en |
| dc.subject.lcsh | Deep level transient spectroscopy | en |
| dc.subject.lcsh | Zinc oxide | en |
| dc.subject.lcsh | Pulsed laser deposition | en |
| dc.title | Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band | en |
| dc.type | Article | en |