Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band
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Date
Authors
Auret, Francois Danie
Meyer, Walter Ernst
Janse van Rensburg, Pieter Johan
Hayes, M.
Nel, Jacqueline Margot
Von Wenckstern, Holger
Schmidt, H.
Biehne, G.
Hochmuth, H.
Lorenz, M.
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Please refer to abstract in article
Description
Keywords
ZnO, High resolution Laplace DLTS, Defects
Sustainable Development Goals
Citation
Auret, FD, Meyer, WE, Janse van Rensburg, PJ, Hayes, M, Nel, JM, Von Wenckstern, H, Schmidt, H, Biehne, G, Hochmuth, H, Lorenz, M & Grundmann, M 2007, 'Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band', Physica B : Condensed Matter, vol. 401-402, pp. 378-381.