Damage formation in Ge during Ar+ and He+ implantation at 15 K

dc.contributor.authorHayes, M.
dc.contributor.authorSchroeter, A.
dc.contributor.authorWendler, E.
dc.contributor.authorWesch, W.
dc.contributor.authorAuret, Francois Danie
dc.contributor.authorNel, Jacqueline Margot
dc.date.accessioned2009-11-11T06:04:24Z
dc.date.available2009-11-11T06:04:24Z
dc.date.issued2009
dc.description.abstractRead abstract in article.en_US
dc.identifier.citationM.Hayes, et al., Physica B (2009), doi:10.1016/j.physb.2009.09.021en_US
dc.identifier.isbn10.1016/j.physb.2009.09.021
dc.identifier.issn0921-4526
dc.identifier.urihttp://hdl.handle.net/2263/11794
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.rightsElsevieren_US
dc.subjectImplantationen
dc.subjectRBSen
dc.subjectChannellingen
dc.subjectGeen
dc.subject.lcshIons -- Defectsen
dc.titleDamage formation in Ge during Ar+ and He+ implantation at 15 Ken_US
dc.typePostprint Articleen_US

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