Characterization of defects introduced in Sb doped Ge by 3keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

dc.contributor.authorNyamhere, Cloud
dc.contributor.authorDas, A.G.M.
dc.contributor.authorAuret, Francois Danie
dc.contributor.authorChawanda, Albert
dc.contributor.authorMtangi, Wilbert
dc.contributor.authorOdendaal, R.Q. (Quintin)
dc.contributor.authorCarr, Alan
dc.contributor.emailcloud.nyamhere@up.ac.zaen_US
dc.date.accessioned2009-10-28T06:11:58Z
dc.date.available2009-10-28T06:11:58Z
dc.date.issued2009
dc.description.abstractPlease read abstract in articleen_US
dc.identifier.citationC.Nyamhere, et al., Physica B (2009), doi:10.1016/j.physb.2009.09.037en_US
dc.identifier.issn0921-4526
dc.identifier.other10.1016/j.physb.2009.09.037
dc.identifier.urihttp://hdl.handle.net/2263/11608
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.rightsElsevieren_US
dc.subjectLaplace DLTSen
dc.subjectDLTSen
dc.subjectDefectsen
dc.subject.lcshDeep level transient spectroscopyen
dc.subject.lcshLaplace transformationen
dc.subject.lcshSputtering (Physics)en
dc.subject.lcshGermaniumen
dc.titleCharacterization of defects introduced in Sb doped Ge by 3keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)en_US
dc.typePostprint Articleen_US

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