Electrical activity of aluminum, boron, and n-type impurities defect-complexes in germanium : implications for enhanced Ge-based devices
| dc.contributor.author | Igumbor, Emmanuel | |
| dc.contributor.author | Mapasha, Refilwe Edwin | |
| dc.contributor.author | Raji, Abdulrafiu Tunde | |
| dc.contributor.author | Omotoso, Ezekiel | |
| dc.date.accessioned | 2025-04-22T10:47:04Z | |
| dc.date.available | 2025-04-22T10:47:04Z | |
| dc.date.issued | 2025-08 | |
| dc.description | DATA AVAILABILITY : Data will be made available on request. | en_US |
| dc.description.abstract | Please read abstract in the article. | en_US |
| dc.description.department | Physics | en_US |
| dc.description.librarian | hj2025 | en_US |
| dc.description.sdg | SDG-12:Responsible consumption and production | en_US |
| dc.description.sponsorship | The University of Johannesburg, South Africa. | en_US |
| dc.description.uri | https://www.elsevier.com/locate/susc | en_US |
| dc.identifier.citation | Igumbor, E., Mapasha, E., Raji, A.T. et al. 2025, 'Electrical activity of aluminum, boron, and n-type impurities defect-complexes in germanium: implications for enhanced Ge-based devices', Surface Science, vol. 758, art. 122742, pp. 1-11, doi : 10.1016/j.susc.2025.122742. | en_US |
| dc.identifier.issn | 0039-6028 (print) | |
| dc.identifier.issn | 1879-2758 (online) | |
| dc.identifier.other | 10.1016/j.susc.2025.122742 | |
| dc.identifier.uri | http://hdl.handle.net/2263/102174 | |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier | en_US |
| dc.rights | © 2025 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/). | en_US |
| dc.subject | Materials modeling | en_US |
| dc.subject | Semiconductor | en_US |
| dc.subject | Electronic | en_US |
| dc.subject | Defect-complexes | en_US |
| dc.subject | Defect-level | en_US |
| dc.subject | Germanium | en_US |
| dc.subject | SDG-12: Responsible consumption and production | en_US |
| dc.title | Electrical activity of aluminum, boron, and n-type impurities defect-complexes in germanium : implications for enhanced Ge-based devices | en_US |
| dc.type | Article | en_US |