Electrical activity of aluminum, boron, and n-type impurities defect-complexes in germanium : implications for enhanced Ge-based devices
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Date
Authors
Igumbor, Emmanuel
Mapasha, Refilwe Edwin
Raji, Abdulrafiu Tunde
Omotoso, Ezekiel
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Please read abstract in the article.
Description
DATA AVAILABILITY : Data will be made available on request.
Keywords
Materials modeling, Semiconductor, Electronic, Defect-complexes, Defect-level, Germanium, SDG-12: Responsible consumption and production
Sustainable Development Goals
SDG-12:Responsible consumption and production
Citation
Igumbor, E., Mapasha, E., Raji, A.T. et al. 2025, 'Electrical activity of aluminum, boron, and n-type impurities defect-complexes in germanium: implications for enhanced Ge-based devices', Surface Science, vol. 758, art. 122742, pp. 1-11, doi : 10.1016/j.susc.2025.122742.