DLTS characterisation of 107 MeV krypton ion-irradiated nitrogen-doped 4H-silicon carbide
| dc.contributor.author | Omotoso, Ezekiel | |
| dc.contributor.author | Igumbor, Emmanuel | |
| dc.contributor.author | Meyer, Walter Ernst | |
| dc.date.accessioned | 2025-03-11T07:52:10Z | |
| dc.date.available | 2025-03-11T07:52:10Z | |
| dc.date.issued | 2025-01 | |
| dc.description | DATA AVAILABILITY : The datasets generated during and/or analysed during the current study are available from the author on reasonable request. | en_US |
| dc.description.abstract | Please read abstract in the article. | en_US |
| dc.description.department | Physics | en_US |
| dc.description.librarian | hj2024 | en_US |
| dc.description.sdg | SDG-09: Industry, innovation and infrastructure | en_US |
| dc.description.sponsorship | Open access funding provided by University of Pretoria. | en_US |
| dc.description.uri | https://link.springer.com/journal/10854 | en_US |
| dc.identifier.citation | Omotoso, E., Igumbor, E. & Meyer, W.E. DLTS characterisation of 107 MeV krypton ion-irradiated nitrogen-doped 4H-silicon carbide. Journal of Materials Science: Materials in Electronics 36, 3 (2025). https://doi.org/10.1007/s10854-024-14060-8. | en_US |
| dc.identifier.issn | 0957-4522 (print) | |
| dc.identifier.issn | 1573-482X (online) | |
| dc.identifier.other | 10.1007/s10854-024-14060-8 | |
| dc.identifier.uri | http://hdl.handle.net/2263/101440 | |
| dc.language.iso | en | en_US |
| dc.publisher | Springer | en_US |
| dc.rights | © The Author(s), 2024. Open Access. This article is licensed under a Creative Commons Attribution 4.0 International License. | en_US |
| dc.subject | Deep level transient spectroscopy (DLTS) | en_US |
| dc.subject | Schottky barrier diodes (SBDs) | en_US |
| dc.subject | Nitrogen-doped 4H-silicon carbide | en_US |
| dc.subject | Swift heavy ions | en_US |
| dc.subject | Electronic devices | en_US |
| dc.subject | SDG-09: Industry, innovation and infrastructure | en_US |
| dc.title | DLTS characterisation of 107 MeV krypton ion-irradiated nitrogen-doped 4H-silicon carbide | en_US |
| dc.type | Article | en_US |