DLTS characterisation of 107 MeV krypton ion-irradiated nitrogen-doped 4H-silicon carbide

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Omotoso_DLTS_2025.pdf (2.2 MB)

Date

2025-01

Authors

Omotoso, Ezekiel
Igumbor, Emmanuel
Meyer, Walter Ernst

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Volume Title

Publisher

Springer

Abstract

Please read abstract in the article.

Description

DATA AVAILABILITY : The datasets generated during and/or analysed during the current study are available from the author on reasonable request.

Keywords

Deep level transient spectroscopy (DLTS), Schottky barrier diodes (SBDs), Nitrogen-doped 4H-silicon carbide, Swift heavy ions, Electronic devices, SDG-09: Industry, innovation and infrastructure

Sustainable Development Goals

SDG-09: Industry, innovation and infrastructure

Citation

Omotoso, E., Igumbor, E. & Meyer, W.E. DLTS characterisation of 107 MeV krypton ion-irradiated nitrogen-doped 4H-silicon carbide. Journal of Materials Science: Materials in Electronics 36, 3 (2025). https://doi.org/10.1007/s10854-024-14060-8.

URI

http://hdl.handle.net/2263/101440

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Research Articles (Physics)
Research Articles (University of Pretoria)
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