Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium

dc.contributor.authorAuret, Francois Danie
dc.contributor.authorCoelho, Sergio M.M.
dc.contributor.authorMyburg, G.
dc.contributor.authorJanse van Rensburg, Pieter Johan
dc.contributor.authorMeyer, Walter Ernst
dc.contributor.emaildanie.auret@up.ac.zaen_US
dc.date.accessioned2009-11-03T07:43:33Z
dc.date.available2009-11-03T07:43:33Z
dc.date.issued2009
dc.description.abstractPlease read abstract in article.en_US
dc.identifier.citationF.D.Auret,etal.,PhysicaB(2009),doi:10.1016/j.physb.2009.09.028en_US
dc.identifier.issn0921-4526
dc.identifier.other10.1016/j.physb.2009.09.028
dc.identifier.urihttp://hdl.handle.net/2263/11683
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.rightsElsevieren_US
dc.subjectAr plasma etchingen
dc.subjectDLTSen
dc.subjectAnnealingen
dc.subjectDefectsen
dc.subject.lcshGermaniumen
dc.subject.lcshDeep level transient spectroscopyen
dc.subject.lcshPlasma etchingen
dc.titleElectronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germaniumen_US
dc.typePostprint Articleen_US

Files

Original bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
Auret_Electronic(2009).pdf
Size:
199.65 KB
Format:
Adobe Portable Document Format
Description:
Postprint Article

License bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
license.txt
Size:
2.43 KB
Format:
Item-specific license agreed upon to submission
Description: