Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium
| dc.contributor.author | Auret, Francois Danie | |
| dc.contributor.author | Coelho, Sergio M.M. | |
| dc.contributor.author | Myburg, G. | |
| dc.contributor.author | Janse van Rensburg, Pieter Johan | |
| dc.contributor.author | Meyer, Walter Ernst | |
| dc.contributor.email | danie.auret@up.ac.za | en_US |
| dc.date.accessioned | 2009-11-03T07:43:33Z | |
| dc.date.available | 2009-11-03T07:43:33Z | |
| dc.date.issued | 2009 | |
| dc.description.abstract | Please read abstract in article. | en_US |
| dc.identifier.citation | F.D.Auret,etal.,PhysicaB(2009),doi:10.1016/j.physb.2009.09.028 | en_US |
| dc.identifier.issn | 0921-4526 | |
| dc.identifier.other | 10.1016/j.physb.2009.09.028 | |
| dc.identifier.uri | http://hdl.handle.net/2263/11683 | |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier | en_US |
| dc.rights | Elsevier | en_US |
| dc.subject | Ar plasma etching | en |
| dc.subject | DLTS | en |
| dc.subject | Annealing | en |
| dc.subject | Defects | en |
| dc.subject.lcsh | Germanium | en |
| dc.subject.lcsh | Deep level transient spectroscopy | en |
| dc.subject.lcsh | Plasma etching | en |
| dc.title | Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium | en_US |
| dc.type | Postprint Article | en_US |