Browsing Research Articles (Physics) by Subject "6H-SiC"

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Solid state reaction and operational stability of ruthenium Schottky contact-on-6H-SiC under argon annealing

Munthali, Kinnock V.; Theron, C.C. (Chris); Auret, Francois Danie; Coelho, Sergio M.M.; Njoroge, Eric Gitau (Springer, 2015-10)

Thin films of ruthenium-on-6-hexagonal silicon carbide (6H-SiC) were analysed by Rutherford backscattering spectroscopy (RBS) at various annealing temperatures. Some thin film samples were also analysed by scanning electron ...
Solid state reaction of ruthenium with 6H-SiC under vacuum annealing and the impact on the electrical performance of its Schottky contact for high temperature operating SiC-based diodes

Munthali, Kinnock V.; Theron, C.C. (Chris); Auret, Francois Danie; Coelho, Sergio M.M.; Prinsloo, Linda Charlotta; Njoroge, Eric Gitau (Springer, 2014-12)

Thin films and Schottky diodes dots of ruthenium (Ru) on bulk-grown n-type-6-hexagonal-silicon carbide (6H-SiC) were annealed isochronally in a vacuum furnace at temperatures ranging from 500–1,000 °C. Rutherford backscattering ...

Now showing items 1-2 of 2

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