Effect of exposing Se pre-implanted polycrystalline SiC to maximum electronic energy loss of 33.7 keV/nm and annealing
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| dc.contributor.author | Mabelane, T.S.
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| dc.contributor.author | Abdalla, Zaki Adam Yousif
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| dc.contributor.author | Skuratov, V.A.
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| dc.contributor.author | Ntshangase, S.S.
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| dc.contributor.author | Masikane, S.C.
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| dc.contributor.author | Hlatshwayo, Thulani Thokozani
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| dc.date.accessioned | 2025-04-22T10:58:15Z | |
| dc.date.available | 2025-04-22T10:58:15Z | |
| dc.date.issued | 2025-05 | |
| dc.description | DATA AVAILABILITY : Data will be made available on request. | en_US |
| dc.description.abstract | Please read abstract in the article. | en_US |
| dc.description.department | Physics | en_US |
| dc.description.librarian | hj2025 | en_US |
| dc.description.sdg | SDG-07:Affordable and clean energy | en_US |
| dc.description.sponsorship | The National Research Foundation (NRF) of South Africa. | en_US |
| dc.description.uri | https://www.sciencedirect.com/journal/surfaces-and-interfaces | en_US |
| dc.identifier.citation | Mabelane, T.S., Abdalla, Z.A.Y., Skuratov, V.A. et al. 2025, 'Effect of exposing Se pre-implanted polycrystalline SiC to maximum electronic energy loss of 33.7 keV/nm and annealing', Surfaces and Interfaces, vol. 64, art. 106376, pp. 1-11, doi : 10.1016/j.surfin.2025.106376. | en_US |
| dc.identifier.issn | 2468-0230 (online) | |
| dc.identifier.other | 10.1016/j.surfin.2025.106376 | |
| dc.identifier.uri | http://hdl.handle.net/2263/102175 | |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier | en_US |
| dc.rights | © 2025 The Author(s). Published by Elsevier B.V. This is an open access article under the CC BY-NC license (http://creativecommons.org/licenses/by- nc/4.0/). | en_US |
| dc.subject | Swift heavy ion (SHI) | en_US |
| dc.subject | Silicon carbide (SiC) | en_US |
| dc.subject | Selenium | en_US |
| dc.subject | Annealing | en_US |
| dc.subject | Recrystallization | en_US |
| dc.subject | SDG-07: Affordable and clean energy | en_US |
| dc.title | Effect of exposing Se pre-implanted polycrystalline SiC to maximum electronic energy loss of 33.7 keV/nm and annealing | en_US |
| dc.type | Article | en_US |
