MBE growth of highly sensitive silicon PIN diode with magnetic Mn-doped Ge quantum dots for photodetector and solar cell applications
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| dc.contributor.author | Yahyaoui, Makrem
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| dc.contributor.author | Aouassa, Mansour
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| dc.contributor.author | Bouabdellaoui, Mohammed
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| dc.contributor.author | Amdouni, Sonia
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| dc.contributor.author | Aladim, A.K.
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| dc.contributor.author | Ali, Abdulraoof I.
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| dc.contributor.author | Boujdaria, Kais
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| dc.date.accessioned | 2025-02-13T09:30:34Z | |
| dc.date.issued | 2024-10 | |
| dc.description | DATA AVAILABILITY : Data will be made available on reasonable request. | en_US |
| dc.description.abstract | Please read abstract in the article. | en_US |
| dc.description.department | Physics | en_US |
| dc.description.embargo | 2025-09-30 | |
| dc.description.librarian | hj2024 | en_US |
| dc.description.sdg | SDG-09: Industry, innovation and infrastructure | en_US |
| dc.description.sponsorship | The Deanship of Scientific Research at Jouf University. | en_US |
| dc.description.uri | https://link.springer.com/journal/339 | en_US |
| dc.identifier.citation | Yahyaoui, M., Aouassa, M., Bouabdellaoui, M. et al. MBE growth of highly sensitive silicon PIN diode with magnetic Mn-doped Ge quantum dots for photodetector and solar cell applications. Applied Physics A 130, 762 (2024). https://doi.org/10.1007/s00339-024-07926-5. | en_US |
| dc.identifier.issn | 0947-8396 (print) | |
| dc.identifier.issn | 1432-0630 (online) | |
| dc.identifier.other | 10.1007/s00339-024-07926-5 | |
| dc.identifier.uri | http://hdl.handle.net/2263/100821 | |
| dc.language.iso | en | en_US |
| dc.publisher | Springer | en_US |
| dc.rights | © The Author(s), under exclusive licence to Springer-Verlag GmbH Germany, part of Springer Nature 2024. The original publication is available at : https://link.springer.com/journal/339. | en_US |
| dc.subject | PIN diodes | en_US |
| dc.subject | Mn-doped-Ge quantum dots | en_US |
| dc.subject | Molecular beam epitaxy | en_US |
| dc.subject | Stranski-Krastanov | en_US |
| dc.subject | Photodetector | en_US |
| dc.subject | Solar cell applications | en_US |
| dc.subject | Ultra-high vacuum molecular beam epitaxy (UHV-MBE) | en_US |
| dc.subject | SDG-09: Industry, innovation and infrastructure | en_US |
| dc.title | MBE growth of highly sensitive silicon PIN diode with magnetic Mn-doped Ge quantum dots for photodetector and solar cell applications | en_US |
| dc.type | Postprint Article | en_US |
