Silicon carbide for solar energy

dc.contributor.authorLebedev, A.A.
dc.contributor.authorBulat, P.V.
dc.contributor.authorVladimirovich, I.E.
dc.contributor.authorKalinina, E.V.
dc.contributor.authorMakarov, Y.N.
dc.date.accessioned2015-08-25T10:11:08Z
dc.date.available2015-08-25T10:11:08Z
dc.date.issued2015
dc.description.abstractPaper presented to the 3rd Southern African Solar Energy Conference, South Africa, 11-13 May, 2015.en_ZA
dc.description.abstractSiC is a wide-bandgap semiconductor that possesses quite a number of interesting properties and is promising for application in power, high-temperature, and radiation hard electronics. Several areas can be distinguished in which SiC is also a promising material for solar power engineering. SiC high temperature power devices and UV detectors can be used at solar energy stations and also SiC can be used as a substrate for growth III-N materials and graphene. New results obtained at the Ioffe Institute, Nitride Crystals Co and National Research University of Information Technologies, Mechanics and Optics in all the above areas of research will be presented in the reporten_ZA
dc.description.librariancf2015en_ZA
dc.format.extent5 pagesen_ZA
dc.format.mediumPDFen_ZA
dc.identifier.citationLebedev, A.A., Bulat, P.V., Vladimirovich, I.E., Kalinina, E.V., Makarov, Y.N. 2015, 'Silicon carbide for solar energy', Paper presented to the 3rd Southern African Solar Energy Conference, South Africa, 11-13 May, 2015.en_ZA
dc.identifier.urihttp://hdl.handle.net/2263/49567
dc.language.isoenen_ZA
dc.publisher3rd Southern African Solar Energy Conference, South Africa, 11-13 May, 2015.en_ZA
dc.rights© 2015 University of Pretoriaen_ZA
dc.subjectSolar energyen_ZA
dc.subjectSilicon carbideen_ZA
dc.subjectHigh temperature stabilityen_ZA
dc.subjectRadiation resistanceen_ZA
dc.subjectGraphen growthen_ZA
dc.titleSilicon carbide for solar energyen_ZA
dc.typePresentationen_ZA

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