The dependence of barrier height on temperature for Pd Schottky contacts on ZnO

dc.contributor.authorMtangi, Wilbert
dc.contributor.authorAuret, Francois Danie
dc.contributor.authorNyamhere, Cloud
dc.contributor.authorJanse van Rensburg, Pieter Johan
dc.contributor.authorChawanda, Albert
dc.contributor.authorDiale, M. (Mmantsae Moche)
dc.contributor.authorNel, Jacqueline Margot
dc.contributor.authorMeyer, Walter Ernst
dc.contributor.emailwilbert.mtangi@up.ac.zaen_US
dc.date.accessioned2009-11-11T06:02:27Z
dc.date.available2009-11-11T06:02:27Z
dc.date.issued2009
dc.description.abstractRead abstract in article.en_US
dc.identifier.citationW.Mtangi, et al., Physica B (2009), doi:10.1016/j.physb.2009.09.022en_US
dc.identifier.issn0921-4526
dc.identifier.other10.1016/j.physb.2009.09.022
dc.identifier.urihttp://hdl.handle.net/2263/11788
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.rightsElsevieren_US
dc.subjectBarrier heighten
dc.subjectDLTSen
dc.subjectTrapsen
dc.subject.lcshDeep level transient spectroscopyen
dc.subject.lcshCapacitance metersen
dc.subject.lcshTemperature measurementsen
dc.subject.lcshDiodes, Schottky-barrieren
dc.titleThe dependence of barrier height on temperature for Pd Schottky contacts on ZnOen_US
dc.typePostprint Articleen_US

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