Effects of chemical treatment on barrier height and ideality factors of Au/GaN Schottky diodes
| dc.contributor.author | Diale, M. (Mmantsae Moche) | |
| dc.contributor.author | Auret, Francois Danie | |
| dc.contributor.email | mmantsae.diale@up.ac.za | en_US |
| dc.date.accessioned | 2009-11-11T06:14:07Z | |
| dc.date.available | 2009-11-11T06:14:07Z | |
| dc.date.issued | 2009 | |
| dc.description.abstract | Read abstract in article. | en_US |
| dc.identifier.citation | M. Diale, F.D. Auret, Physica B (2009), doi:10.1016/j.physb.2009.09.039 | en_US |
| dc.identifier.issn | 0921-4526 | |
| dc.identifier.other | 10.1016/j.physb.2009.09.039 | |
| dc.identifier.uri | http://hdl.handle.net/2263/11801 | |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier | en_US |
| dc.rights | Elsevier | en_US |
| dc.subject | Surface treatment | en |
| dc.subject | Schottky contacts | en |
| dc.subject | Barrier height | en |
| dc.subject.lcsh | Diodes, Schottky-barrier | en |
| dc.title | Effects of chemical treatment on barrier height and ideality factors of Au/GaN Schottky diodes | en_US |
| dc.type | Postprint Article | en_US |