Selenium migration and SiC structural evolution post helium and selenium Co-implantation and annealing

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Authors

Mthalane, S.
Abdelbagi, H.A.A.
Mtshali, C.B.
Li, B.S.
Skuratov, V.A.
Ntshangase, S.S.
Hlatshwayo, Thulani Thokozani

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

Please read abstract in the article.

Description

DATA AVAILABILITY : Data will be made available on request.

Keywords

Silicon carbide (SiC), Selenium, Transmission electron microscopy (TEM), Rutherford backscattering spectrometry (RBS), Co-implantation, He-bubbles, Recrystallization, Helium (He), SDG-07: Affordable and clean energy

Sustainable Development Goals

SDG-07:Affordable and clean energy

Citation

Mthalane, S., Abdelbagi, H.A.A., Mtshali, C.B. et al. 2025, 'Selenium migration and SiC structural evolution post helium and selenium co-implantation and annealing', Vacuum, vol. 238, art. 114322, pp. 1-11, doi : 10.1016/j.vacuum.2025.114322.