Electrical characterization of rare-earth implanted GaN

Abstract

Please read abstract in article

Deep-level transient spectroscopy (DLTS) measurements were used to characterize the electrical properties of MOCVD grown, europium-(Eu) and xenon-(Xe) implanted GaN films on sapphire substrates. Implantation energy was 80keV with afluence of 1x1014cm-2 along a channeled crystallographic direction. Defect levels were observed at EC 0.19eV for both Eu- and Xe- implantation which were predicted to be a rare-earth related donor level by theoretical calculations. Other defect levels are observed with energy levels located at 0.22,0.68,0.49,0.60,0.77eV and 0.48,0.64,0.45, 0.72eV below the conduction band for Eu and Xe implantation, respectively. Some of these levels have similar defect signatures and can be related to other implantation related defects introduced in erbium, praseodymium and helium implantations.